Mono-Si Texturization Additive MQT-810 Series

It's suitable for Mono standard, Mono PERC and TOPCon.

Stable Performance, High Efficiency

• SunFonergy's Mono-Si texturization additive has stable cell performance throughout process lifetime, including high efficiency, stable reflectance, consistent etch weight, and uniform surface morphology.

Strong Cleaning Performance

• It has strong cleaning performance, especially for mixed wafer sources without SDR process as well as rework wafers. There is also no residue crystallization in the bath.

High Compatibility

• It is compatible with wafers with low SDR weight or no SDR process. Even with different tooling machines or wafer sources, SunFonergy's additive can be easily tuned for optimal efficiency.

Alkaline Polishing Additive BPL-719Series

Strong Cleaning Power

• SunFonergy's alkaline additive can more effecitively remove wafer residues, resulting in a cleaner alkaline polishing process.

Strong Protection, More Uniform Surface

• SunFonergy's additive can be used with both hot O3 (inline and batch type) and wet O3 processes. More uniform surface, smoother overlays among polishied pyramid bases.

Reduces Cost

• Reduces the post-cleaning bath's alkaline chemical concentration and/or removes the post-cleaning step.

Mono-Si Texturization Additive MQT-809 Series

It's suitable for Mono standard, Mono PERC and TOPCon.

Stable Performance, High Efficiency

• SunFonergy's Mono-Si texturization additive has stable cell performance throughout process lifetime, including high efficiency, stable reflectance, consistent etch weight, and uniform surface morphology.

Strong Cleaning Performance

• It has strong cleaning performance, especially for mixed wafer sources without SDR process as well as rework wafers. There is also no residue crystallization in the bath.

High Compatibility

• It is compatible with wafers with low SDR weight or no SDR process. Even with different tooling machines or wafer sources, SunFonergy's additive can be easily tuned for optimal efficiency.